Infineon IPU80R1K4CE: A High-Performance 80mΩ MOSFET for Advanced Power Management Applications

The relentless drive for higher efficiency, greater power density, and enhanced thermal performance in modern electronics places immense demands on power semiconductor components. At the heart of many advanced power management systems, from server and telecom power supplies to motor drives and battery management, lies the MOSFET. The Infineon IPU80R1K4CE stands out as a premier solution, engineered to meet these rigorous challenges head-on.

This device is an N-channel MOSFET built on Infineon's advanced OptiMOS™ 6 technology platform, a hallmark of innovation in power semiconductors. Its most striking feature is an ultra-low maximum drain-source on-state resistance (R DS(on)) of just 80mΩ at 10V. This exceptionally low resistance is the primary determinant of efficiency, as it directly minimizes conduction losses. When a MOSFET is in its on-state, the power dissipated is proportional to the square of the current and the R DS(on). Therefore, a reduction in R DS(on) by mere milliohms translates into significant gains in system efficiency, reduced heat generation, and the potential for cooler operation.

Beyond its impressive R DS(on), the IPU80R1K4CE is optimized for switching performance. It features low gate charge (Q G) and low figures of merit (FOM) such as R DS(on) Q G. These characteristics are critical for high-frequency switching applications. A lower gate charge means the drive circuit can switch the transistor on and off faster and with less energy, reducing switching losses. This allows power supply designers to increase the switching frequency, which in turn enables the use of smaller passive components like inductors and capacitors, leading to more compact and lightweight end products.

The component is offered in the space-saving PG-TDSON-8-22 (SuperSO8) package. This package is not only compact, aiding in achieving higher power density, but it also offers superior thermal performance compared to standard SO-8 packages. Its improved thermal characteristics ensure that heat is effectively transferred away from the silicon die, maintaining lower junction temperatures and enhancing long-term reliability and power handling capability.

Target applications for the IPU80R1K4CE are vast and demanding. It is an ideal candidate for:

Synchronous rectification in switched-mode power supplies (SMPS) for computing and telecom.

DC-DC conversion stages in high-current point-of-load (POL) converters.

Motor control and drive circuits in industrial automation and consumer appliances.

Battery protection switches and management systems in power tools and energy storage.

ICGOOODFIND: The Infineon IPU80R1K4CE exemplifies the progress in power MOSFET technology, combining an ultra-low 80mΩ R DS(on) with superior switching characteristics and excellent thermal performance in a compact package. It is a top-tier choice for designers aiming to push the boundaries of efficiency, power density, and reliability in their advanced power management applications.

Keywords: OptiMOS™ 6, Low R DS(on), High-Efficiency, Power Density, Synchronous Rectification