Infineon IPB180N10S4-02 100V OptiMOS 5 Power MOSFET Datasheet and Application Analysis

The Infineon IPB180N10S4-02 represents a significant advancement in power semiconductor technology, belonging to the esteemed OptiMOS™ 5 family. This 100V N-channel power MOSFET is engineered to deliver exceptional efficiency and robustness in a compact D²PAK (TO-263) package, making it an ideal solution for a wide array of demanding power conversion applications.

A deep dive into its datasheet reveals a device optimized for ultra-low switching and conduction losses. With a maximum on-state resistance (RDS(on)) of just 1.8 mΩ (max. at VGS = 10 V), this MOSFET sets a high standard for minimizing power dissipation in the on-state. This characteristic is paramount for enhancing system efficiency, reducing heat generation, and enabling higher power density designs. The low gate charge (QG) and figures of merit like FOM (RDS(on) QG) further underscore its superior switching performance, allowing for operation at higher frequencies without a substantial efficiency penalty.

The device's 100V drain-source voltage (VDS) rating makes it exceptionally well-suited for applications in 48V power systems, which are commonplace in modern automotive environments, telecommunications infrastructure, and industrial power supplies. Its high-performance characteristics are critical for use in:

DC-DC Converters: Serving as the primary switch in synchronous buck or boost topologies for voltage regulation modules (VRMs) and intermediate bus converters (IBCs).

Motor Control: Driving brushed DC or brushless DC (BLDC) motors in automotive systems like electric power steering (EPS), pumps, and fans, where high efficiency and reliability are non-negotiable.

Solar Inverters: Used in the power stage of maximum power point tracking (MPPT) charge controllers and inverter bridges.

Beyond the raw numbers, the OptiMOS™ 5 technology incorporates advanced features that enhance real-world application reliability. The high body diode robustness ensures safe operation during hard commutation events, a critical factor in inductive switching circuits like motor drives. Furthermore, the device offers an excellent tolerance to avalanche and overcurrent conditions, providing designers with a greater margin of safety in rugged environments.

The D²PAK surface-mount package offers a compelling combination of superior thermal performance and a footprint compatible with automated PCB assembly processes. Its low thermal resistance from junction to case (RthJC) ensures that heat is effectively transferred away from the silicon die to the heatsink, which is crucial for maintaining performance under continuous high-current operation.

ICGOOODFIND: The Infineon IPB180N10S4-02 is a benchmark 100V MOSFET that excels in delivering a perfect balance of ultra-low RDS(on), fast switching speed, and high reliability. Its performance characteristics make it a top-tier component for designers aiming to push the boundaries of efficiency and power density in 48V systems across automotive, industrial, and renewable energy applications.

Keywords: OptiMOS 5, Ultra-low RDS(on), Power Efficiency, 100V MOSFET, High Power Density.