Infineon IPP110N20N3G 200V OptiMOS 5 Power MOSFET for High-Efficiency Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power semiconductor technology. In this landscape, the Infineon IPP110N20N3G, a 200V N-channel power MOSFET from the advanced OptiMOS™ 5 technology family, stands out as a premier solution for designers of high-performance power conversion systems.

This MOSFET is engineered to excel in a wide array of applications, including server and telecom power supplies, industrial motor drives, solar inverters, and Class-D audio amplifiers. Its core advantage lies in its exceptional ultra-low figure-of-merit (R DS(on) x Q G), which is a critical indicator of performance. A low on-resistance (R DS(on)) minimizes conduction losses when the device is fully switched on, while a low gate charge (Q G) ensures swift switching transitions, thereby reducing switching losses. This synergistic combination is the fundamental driver behind achieving unprecedented levels of energy efficiency and thermal management.

Key features that make the IPP110N20N3G a superior choice include:

Minimal Conduction Losses: With a maximum R DS(on) of just 3.7 mΩ at 10 V, it significantly reduces power dissipation under load.

Exceptional Switching Performance: The low gate charge enables faster switching frequencies, allowing for the use of smaller passive components like inductors and capacitors. This directly contributes to increased power density—enabling more compact and lighter end-products.

Enhanced Robustness: The device offers an excellent body diode robustness (commutating dv/dt), ensuring high reliability in demanding environments where reverse recovery behavior is critical.

Optimized Packaging: Housed in the TO-220 package, it provides a robust and industry-standard footprint that balances excellent thermal performance with ease of assembly.

Designers leveraging the IPP110N20N3G can push the boundaries of their power conversion designs. By operating at higher frequencies with reduced losses, systems can achieve higher efficiency ratings, which is paramount for reducing operational costs and meeting stringent environmental regulations. The improved thermal performance also simplifies cooling requirements, potentially reducing the need for large heatsinks or complex thermal management systems.

ICGOODFIND: The Infineon IPP110N20N3G OptiMOS™ 5 MOSFET is a benchmark device for 200V applications, masterfully balancing ultra-low losses, superior switching speed, and high robustness. It is an indispensable component for engineers aiming to maximize efficiency and power density in their next-generation power conversion designs.

Keywords: Power Efficiency, OptiMOS™ 5, Low R DS(on), High Power Density, Fast Switching