Infineon IRFB7440PBF: High-Performance Power MOSFET for Efficient Switching Applications

Release date:2025-11-05 Number of clicks:62

Infineon IRFB7440PBF: High-Performance Power MOSFET for Efficient Switching Applications

In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. The Infineon IRFB7440PBF power MOSFET stands out as a premier component engineered to meet these demanding requirements in a wide array of switching applications. This N-channel MOSFET, built on Infineon's advanced proprietary technology, is designed to minimize losses and maximize performance in circuits ranging from switch-mode power supplies (SMPS) and motor controls to DC-DC converters and inverters.

A key highlight of the IRFB7440PBF is its exceptionally low on-state resistance (RDS(on)) of just 3.7 mΩ at 10 V. This ultra-low resistance is critical for reducing conduction losses, which directly translates to higher efficiency and less heat generation. When a device operates with lower losses, systems can achieve better overall energy efficiency, a crucial factor for both battery-powered applications and high-power systems where thermal management is a challenge.

The device is rated for a maximum drain-source voltage (VDS) of 400V and a continuous drain current (ID) of 195 A, making it robust enough to handle high-power tasks. This high current capability, combined with the low RDS(on), ensures that the MOSFET can operate effectively in demanding environments without becoming a bottleneck for performance.

Furthermore, the IRFB7440PBF features fast switching characteristics, which are essential for high-frequency operation. Minimizing switching losses is vital in modern power conversion systems that operate at increasing frequencies to reduce the size of passive components like inductors and capacitors. The MOSFET's low gate charge (Qg) facilitates rapid turn-on and turn-off, allowing designers to push the frequency boundaries while maintaining control over efficiency.

The component is offered in a TO-220 FullPAK package. This package is fully isolated, which simplifies the mounting process by eliminating the need for an additional insulating kit between the device and the heat sink. This not only reduces the bill of materials but also improves the overall thermal impedance from the junction to the heat sink, enabling more effective heat dissipation and enhancing long-term reliability.

ICGOODFIND: The Infineon IRFB7440PBF is a high-performance power MOSFET that excels in efficiency and reliability for modern switching applications. Its defining combination of ultra-low on-state resistance, high current capacity, fast switching speed, and an isolated package makes it an superior choice for designers aiming to optimize power density and thermal performance in their systems.

Keywords: Power MOSFET, Low RDS(on), High Efficiency, Fast Switching, Thermal Performance.

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