Infineon IPI60R199CP CoolMOS PFD7 Power Transistor: High-Efficiency Performance for Advanced Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics demands continuous innovation in power semiconductor technology. At the forefront of this evolution is Infineon's CoolMOS™ PFD7 series, with the IPI60R199CP standing out as a premier superjunction (SJ) MOSFET engineered to set new benchmarks in advanced switching applications. This device encapsulates a perfect synergy of ultra-low effective dynamic losses and exceptional ease of use, making it an ideal cornerstone for high-performance power conversion systems.

A defining characteristic of the IPI60R199CP is its revolutionary superjunction technology, which has been meticulously refined. It is optimized for hard-switching and soft-switching topologies common in switched-mode power supplies (SMPS), server and telecom power systems, industrial drives, and renewable energy inverters. The transistor boasts a low maximum on-state resistance (R DS(on)) of just 199 mΩ at a drain-source voltage (V DS) of 650 V. This inherently low resistance is pivotal in minimizing conduction losses, directly translating into higher efficiency, reduced heat generation, and the potential for more compact designs through reduced cooling requirements.

Beyond static performance, the IPI60R199CP truly excels in dynamic operation. It features integrated fast body diode with excellent reverse recovery characteristics. This is critical for mitigating switching losses, especially in circuits like power factor correction (PFC) and LLC resonant converters, where the body diode's behavior significantly impacts overall efficiency and electromagnetic interference (EMI). The result is superior switching performance that allows systems to operate at higher frequencies without a proportional increase in losses, enabling the use of smaller passive components like magnetics and capacitors.

Furthermore, Infineon has designed the CoolMOS PFD7 family with robustness and reliability as core tenets. The IPI60R199CP offers a high level of parameter stability over its lifetime and exceptional resilience against avalanche and overcurrent conditions. This inherent ruggedness ensures long-term operational stability in demanding environments, reducing the risk of field failures. The TO-220 FullPAK package provides the added benefit of fully isolated mounting, which simplifies the assembly process by eliminating the need for an additional insulation kit, thereby improving thermal performance and system reliability.

ICGOOODFIND: The Infineon IPI60R199CP CoolMOS PFD7 is a state-of-the-art power transistor that masterfully balances ultra-low conduction and switching losses with robust reliability. Its advanced superjunction technology and integrated fast diode make it a superior choice for designers aiming to push the boundaries of efficiency and power density in advanced switching power supplies and industrial applications.

Keywords:

CoolMOS PFD7

High-Efficiency

Superjunction MOSFET

Low Switching Losses

Advanced Switching Applications