High-Performance Design with the Infineon IPP65R190C6 190mΩ Superjunction MOSFET

In the relentless pursuit of higher efficiency, power density, and reliability in power electronics, the choice of switching device is paramount. The Infineon IPP65R190C6 stands out as a premier Superjunction (SJ) MOSFET engineered to meet these demanding challenges. With an ultra-low on-state resistance (RDS(on)) of just 190mΩ, this component is a cornerstone for designers aiming to push the boundaries of performance in applications ranging from server and telecom SMPS (Switched-Mode Power Supplies) to industrial motor drives and renewable energy systems.

The core of its advantage lies in the advanced CoolMOS™ C6 superjunction technology. This technology achieves a remarkable minimization of conduction losses. The lower the RDS(on), the less energy is wasted as heat when the MOSFET is in its on-state, directly translating to higher overall system efficiency and reduced need for complex thermal management. This allows for designs that are both cooler and more compact. Furthermore, the device is optimized for hard-switching topologies like PFC (Power Factor Correction) and two-switch forward converters, commonly found in high-power AC-DC converters.

Beyond low conduction losses, switching performance is critical. The IPP65R190C6 exhibits excellent switching characteristics, including low gate charge (Qg) and low effective output capacitance (Coss(eff)). These parameters are crucial for achieving high switching frequencies. By enabling faster switching, designers can reduce the size of passive components such as inductors and transformers, significantly increasing the power density of the final design. The device’s high ruggedness and avalanche capability also ensure enhanced reliability under stressful operating conditions, including overvoltage transients.

The benefits extend to the system level. Using a MOSFET with such a low RDS(on) allows for operation at higher continuous currents, supporting more powerful output stages. Its 650V drain-source voltage rating provides ample headroom for operation from universal mains inputs (85 VAC – 265 VAC), making it a versatile choice for global products. The combination of high efficiency, power density, and robustness makes the IPP65R190C6 a key enabler for next-generation power supplies that must comply with increasingly stringent energy efficiency regulations like 80 PLUS Titanium.

ICGOO

DFIND

In summary, the Infineon IPP65R190C6 is more than just a MOSFET; it is a performance multiplier. Its exceptional blend of ultra-low on-resistance, fast switching speed, and high ruggedness empowers engineers to create power systems that are significantly more efficient, compact, and reliable, ultimately setting a new benchmark in power design.

Keywords: Superjunction MOSFET, High Efficiency, Low RDS(on), Power Density, Hard-Switching Topologies