Infineon BGA420H6327 SiGe Low-Noise Amplifier for RF Applications

The Infineon BGA420H6327 is a high-performance silicon-germanium (SiGe) low-noise amplifier (LNA) designed for a wide range of RF applications. Operating within a frequency range from 50 MHz to 4000 MHz, this device is exceptionally versatile, making it suitable for systems such as cellular infrastructure, IoT connectivity, broadcast receivers, and wireless communication modules.

A key strength of the BGA420H6327 lies in its ultra-low noise figure of just 0.9 dB at 1.9 GHz. This outstanding performance ensures minimal signal degradation, which is critical for maintaining high signal integrity and receiver sensitivity in demanding applications. Additionally, the LNA provides a high gain of up to 19.2 dB, significantly boosting weak incoming signals without proportionally increasing the noise level.

The amplifier is housed in a compact and industry-standard SOT343 (SC-70) surface-mount package, facilitating easy integration into space-constrained PCB designs. Its robust design includes built-in ESD protection, enhancing reliability in real-world operating environments. Furthermore, it requires a single positive supply voltage ranging from 1.8 V to 5 V, offering flexibility for use in both battery-powered and line-operated devices.

ICGOODFIND: The Infineon BGA420H6327 stands out as an exceptional solution for designers seeking a combination of very low noise, high gain, and broad frequency coverage in a miniature package, making it a top choice for enhancing front-end receiver performance.

Keywords:

Low-Noise Amplifier (LNA), Silicon-Germanium (SiGe), RF Applications, Noise Figure, SOT343 Package